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NT5DS16M8AT-7K 参数 Datasheet PDF下载

NT5DS16M8AT-7K图片预览
型号: NT5DS16M8AT-7K
PDF下载: 下载PDF文件 查看货源
内容描述: DDR同步DRAM [DDR Synchronous DRAM ]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 76 页 / 1242 K
品牌: ETC [ ETC ]
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NT5DS32M4AT  
NT5DS16M8AT  
128Mb Double Data Rate SDRAM  
Truth Table 2: Clock Enable (CKE)  
1. CKE n is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.  
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.  
3. Command n is the command registered at clock edge n, and action n is a result of command n.  
4. All states and sequences not shown are illegal or reserved.  
CKE n-1  
CKEn  
Current State  
Command n  
Action n  
Notes  
Previous  
Cycle  
Current  
Cycle  
Self Refresh  
Self Refresh  
Power Down  
Power Down  
All Banks Idle  
All Banks Idle  
Bank(s) Active  
L
L
L
H
L
X
Maintain Self-Refresh  
Deselect or NOP  
X
Exit Self-Refresh  
1
L
Maintain Power-Down  
Exit Power-Down  
L
H
L
Deselect or NOP  
Deselect or NOP  
Auto Refresh  
Deselect or NOP  
H
H
H
Precharge Power-Down Entry  
Self Refresh Entry  
L
L
Active Power-Down Entry  
See “Truth Table 3: Current State  
Bank n - Command to Bank n (Same  
Bank)on page 46  
H
H
1. Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (t  
200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.  
) period. A minimum of  
XSNR  
45  
REV 1.0  
May, 2001  
©
NANYA TECHNOLOGY CORP. All rights reserved.  
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.  
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