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U634H256SK35 参数 Datasheet PDF下载

U634H256SK35图片预览
型号: U634H256SK35
PDF下载: 下载PDF文件 查看货源
内容描述: POWERSTORE 32K ×8 NVSRAM [POWERSTORE 32K X 8 NVSRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 248 K
品牌: ZMD [ Zentrum Mikroelektronik Dresden AG ]
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U634H256  
Disabling Automatic STORES: STORE Cycle Inhibit and Automatic Power Up RECALL  
VCAP  
5.0 V  
VSWITCH  
t
STORE inhibit  
(24)  
Power Up  
RECALL  
tRESTORE  
Power  
Supply  
VCCX  
HSB  
VCAP  
VCAP  
VCCX  
HSB  
10 kΩ  
Power  
Supply  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
(optional,  
2
2
see description HSB  
nonvolatile store)  
10 kΩ  
3
3
(optional,  
4
4
see description HSB  
nonvolatile store)  
5
5
6
6
+
7
7
8
8
100 µF  
0.1 µF  
0.1 µF  
9
9
± 20 % Bypass  
Bypass  
10  
10  
11  
12  
13  
14  
15  
16  
11  
12  
13  
14  
15  
16  
22  
21  
20  
19  
18  
17  
22  
21  
20  
19  
18  
17  
VSS  
VSS  
Figure 1: Automatic STORE Operation  
Figure 2: Disabling Automatic STORES  
Schematic Diagram  
Schematic Diagram  
Low Average Active Power  
The U634H256 has been designed to draw significantly  
less power when E is LOW (chip enabled) but the  
access cycle time is longer than 55 ns.  
When E is HIGH the chip consumes only standby cur-  
rent.  
1. CMOS or TTL input levels  
2. the time during which the chip is disabled (E HIGH)  
3. the cycle time for accesses (E LOW)  
4. the ratio of READs to WRITEs  
5. the operating temperature  
The overall average current drawn by the part depends  
on the following items:  
6. the power supply voltage level  
The information describes the type of component and shall not be considered as assured characteristics. Terms of  
delivery and rights to change design reserved.  
13  
April 21, 2004