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U634H256SK35 参数 Datasheet PDF下载

U634H256SK35图片预览
型号: U634H256SK35
PDF下载: 下载PDF文件 查看货源
内容描述: POWERSTORE 32K ×8 NVSRAM [POWERSTORE 32K X 8 NVSRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 248 K
品牌: ZMD [ Zentrum Mikroelektronik Dresden AG ]
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U634H256  
Nonvolatile Memory Operations  
Mode Selection  
A13 - A0  
(hex)  
E
W
HSB  
Mode  
I/O  
Power  
Notes  
H
L
L
L
X
H
L
H
H
H
H
X
X
X
Not Selected  
Read SRAM  
Write SRAM  
Output High Z  
Output Data  
Input Data  
Standby  
Active  
Active  
Active  
l
H
0E38  
31C7  
03E0  
3C1F  
303F  
0FC0  
Read SRAM  
Read SRAM  
Output Data  
Output Data  
Output Data  
Output Data  
Output Data  
Output High Z  
k, l  
k, l  
k, l  
k, l  
k, l  
k
Read SRAM  
Read SRAM  
Read SRAM  
Nonvolatile STORE  
L
H
H
0E38  
31C7  
03E0  
3C1F  
303F  
0C63  
Read SRAM  
Read SRAM  
Output Data  
Output Data  
Output Data  
Output Data  
Output Data  
Output High Z  
Active  
k, l  
k, l  
k, l  
k, l  
k, l  
k
Read SRAM  
Read SRAM  
Read SRAM  
Nonvolatile RECALL  
X
X
L
X
STORE/Inhibit  
Output High Z  
I
CC2/Standby  
m
k: The six consecutive addresses must be in order listed (0E38, 31C7, 03E0, 3C1F, 303F, 0FC0) for a Store cycle or (0E38, 31C7, 03E0, 3C1F,  
303F, 0C63) for a RECALL cycle. W must be high during all six consecutive cycles. See STORE cycle and RECALL cycle tables and dia  
grams for further details.  
The following six-address sequence is used for testing purposes and should not be used: 0E38, 31C7, 03E0, 3C1F, 303F, 339C.  
l: I/O state assumes that G VIL. Activation of nonvolatile cycles does not depend on the state of G.  
m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)  
completes, the part will go into standby mode inhibiting all operation until HSB rises.  
Symbol  
PowerStore Power Up RECALL/  
No.  
Conditions  
Min. Max. Unit  
Hardware Controlled STORE  
Alt.  
IEC  
24 Power Up RECALL Durationn, e  
25 STORE Cycle Duration  
26 HSB Low to Inhibit One  
27 HSB High to Inhibit Offe  
28 External STORE Pulse Widthe  
HSB Output Low Currente,o  
tRESTORE  
tHLQX  
tHLQZ  
650  
10  
µs  
ms  
µs  
ns  
ns  
mA  
µA  
V
>
td(H)S  
tdis(H)S  
ten(H)S  
tw(H)S  
VCC 4.5 V  
1
tHHQX  
tHLHX  
700  
20  
3
IHSBOL  
IHSBOH  
VSWITCH  
.
HSB = VOL  
HSB = VIL  
HSB Output High Currente, o  
5
60  
Low Voltage Trigger Level  
4.0  
4.5  
n: tRESTORE starts from the time VCC rises above VSWITCH  
o: HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U634H256 to be ganged  
together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U634H256 HSB pins.  
7
April 21, 2004