Preliminary Information SP5848
Electrical Characteristics (continued)
o
o
T
= -40 C to +80 C, Vcc = 4.5 to 5.5 V, These characteristics are guaranteed by either production test or
amb
design. They apply within the specified ambient temperature and supply voltage unless otherwise stated.
Characteristic
Pin
Value
Typ
Units
Conditions
Min
30
Max
300
Synthesiser 2 (DOWN)
RF2 input voltage
RF2 input impedance
RF2 division ratio
Reference division 2
ratio
5,6
5,6
mVrms 80 -1300MHz
See Figure 5
240
65535
See Table 2
Comparison frequency 2
16.25
4000
KHz
Phase noise degrades above
250KHz
Equivalent phase noise
at phase detector 2
-144
dBc/Hz SSB, within loop bandwidth, all
comparison frequencie up to
250KHz
Charge pump 2 output
current
Charge pump 2 output
leakage
Charge pump 2 drive
output curent
2
2
3
See Table 4
Vpin 2=2V
Vpin2 = 2V
3
10
nA
0.5
mA
Vpin 3 = 0.7V
Data, clock and enable 12,11,13
Input high voltage
Input low voltage
Input current
3
0
-10
Vcc
0.7
10
V
V
µA
All input conditions
hysterysis
0.8
Vpp
Clock rate
11
500
KHz
Bus timing -
Data set up
Data hold
Enable setup
Enable hold
Clock to enable
Reference Oscillator
Crystal frequency
External reference input
frequency
300
600
300
600
300
ns
ns
ns
ns
ns
8, 9
8
2
2
16
20
MHz
MHz
See Figure 6 for application
Sinewave coupled through
10nF blocking capacitor
Sinewave coupled through
10nF blocking capacitor
See note 1
External reference drive
8
0.2
2
0.5
Vpp
Outputs ports P0 - P1
sink current
1, 20
mA
Vport = 0.7V
leakage current
10
µA
Vport = Vcc
Note 1 Output ports high impedance on power up, with data, clock and enable at logic 0
3
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