Le7920
Data Sheet
ELECTRICAL CHARACTERISTICS (continued)
Description
Line Characteristics
Test Conditions (See Note 1)
Min
Typ
Max
Unit
Note
IL, Short Loops, Active state
IL, Long Loops, Active state
RLDC = 600 Ω
RLDC = 1930 Ω, BAT = –42.75 V,
TA = 25°C
20
18
23
19
26
mA
IL, Accuracy, Standby state
0.7IL
18
IL
1.3IL
BAT – 3 V
------------------------------
RL + 400
IL=
TA= 25°C
Constant-current region
RL = 0
Active, A and B to ground
VBAT = –52 V
30
IL, Loop current, Disconnect state
ILLIM
VAB, Open Circuit voltage
100
120
µA
mA
V
85
–44
–42.75
Power Supply Rejection Ratio (VRIPPLE = 100 mVrms), Active Normal State
VCC
VBAT
50 Hz to 3.4 kHz
50 Hz to 3.4 kHz
CAS pin to VBAT
30
28
85
40
50
170
dB
5
4
Effective internal resistance
Power Dissipation
On hook, Disconnect state
On hook, Standby state
On hook, Active state
Off hook, Standby state
Off hook, Active state
Supply Currents, Battery = –48V
255
kΩ
25
35
125
860
450
70
100
270
1200
800
mW
RL = 600 Ω
RL = 300 Ω, RTMG = 2350 Ω
ICC
,
Disconnect state
1.7
2.2
6.3
4.0
4.0
8.5
On-hook VCC supply current
Standby state
Active state, BAT = –48 V
mA
IBAT
,
Disconnect state
0.25
0.55
2.8
1.0
1.5
4.8
On-hook VBAT supply current
Standby state
Active state, BAT = –48 V
RFI Rejection
RFI rejection
Receive Summing Node (RSN)
RSN DC voltage
100 kHz to 30 MHz, (See Figure F)
1.0
20
mVrms
4
4
IRSN = 0 mA
200 Hz to 3.4 kHz
0
10
V
Ω
RSN impedance
Logic Inputs (C2–C1 and D3–D1)
VIH, Input High voltage
VIL, Input Low voltage
IIH, Input High current
IIL, Input Low current
Logic Output (DET)
VOL, Output Low voltage
VOH, Output High voltage
Ring-Trip Detector Input (DA, DB)
Bias current
2.0
V
0.8
40
–75
–400
µA
IOUT = 0.3 mA, 15 kΩ to VCC
IOUT = –0.1 mA, 15 kΩ to VCC
0.40
+50
V
2.4
–500
–50
–50
0
nA
mV
Offset voltage
Source resistance = 2 MΩ
6
9
Zarlink Semiconductor Inc.
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