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W25P022A-6 参数 Datasheet PDF下载

W25P022A-6图片预览
型号: W25P022A-6
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×32连拍PIPELINED高速CMOS静态RAM [64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 17 页 / 310 K
品牌: WINBOND [ WINBOND ]
 浏览型号W25P022A-6的Datasheet PDF文件第1页浏览型号W25P022A-6的Datasheet PDF文件第2页浏览型号W25P022A-6的Datasheet PDF文件第3页浏览型号W25P022A-6的Datasheet PDF文件第5页浏览型号W25P022A-6的Datasheet PDF文件第6页浏览型号W25P022A-6的Datasheet PDF文件第7页浏览型号W25P022A-6的Datasheet PDF文件第8页浏览型号W25P022A-6的Datasheet PDF文件第9页  
W25P022A  
TRUTH TABLE  
ADDRESS  
USED  
CE1  
CE3  
ADSP  
ADSC  
ADV  
CYCLE  
CE2  
DATA  
WRITE*  
OE  
Unselected  
No  
1
0
0
0
0
0
0
X
X
1
1
X
X
1
1
X
1
0
X
1
X
1
X
X
0
X
1
X
0
0
1
1
0
1
1
1
X
X
1
1
X
X
1
X
1
1
X
1
X
0
X
X
0
0
X
0
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
X
X
X
X
X
X
X
0
0
0
0
1
1
1
1
1
1
X
0
0
1
1
X
X
X
X
X
X
X
1
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
D-Out  
Hi-Z  
D-Out  
Hi-Z  
D-Out  
Hi-Z  
D-Out  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
X
Unselected  
No  
X
Unselected  
No  
X
1
X
Unselected  
No  
X
0
X
Unselected  
No  
X
0
X
Begin Read  
External  
External  
Next  
1
X
Begin Read  
1
0
Read  
Read  
Read  
Read  
Read  
Read  
Read  
Read  
Read  
Write  
Write  
Write  
Write  
Write  
Write  
Write  
Continue Read  
Continue Read  
Continue Read  
Continue Read  
Suspend Read  
Suspend Read  
Suspend Read  
Suspend Read  
Begin Write  
X
X
X
X
X
X
X
X
X
X
1
X
X
X
X
X
X
X
X
X
X
0
Next  
0
Next  
1
Next  
0
Current  
Current  
Current  
Current  
Current  
Current  
External  
Next  
1
0
1
0
X
X
X
X
X
X
X
Begin Write  
Begin Write  
Continue Write  
Continue Write  
Suspend Write  
Suspend Write  
X
X
X
X
X
X
X
X
Next  
Current  
Current  
Notes:  
1. For a detailed definition of read/write, see the Write Table below.  
2. An "X" means don't care, "1" means logic high, and "0" means logic low.  
3. The OE pin enables the data output but is not synchronous with the clock. All signals of the SRAM are sampled  
to the bus clock except for the OE pin.  
synchronous  
4. On a write cycle that follows a read cycle, OE must be inactive prior to the start of the write cycle to allow write data to set  
up  
the SRAM. OE must also disable the output buffer prior to the end of a write cycle to ensure the SRAM data hold timings  
are met.  
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