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29F400B-12TI 参数 Datasheet PDF下载

29F400B-12TI图片预览
型号: 29F400B-12TI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, 120ns, PDSO48, TSOP-48]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 38 页 / 227 K
品牌: WINBOND [ WINBOND ]
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BRIGHT  
Microelectronics  
Inc.  
Preliminary BM29F400T/BM29F400B  
Resume command (30H). Note that any other commands during the time-out will RESET the device  
to the Read mode. The address pins are "don't cares" when writing the Erase Suspend or Erase  
Resume commands.  
When the Erase Suspend command is written during a Sector Erase operation, the chip will take  
between 1 uS and 230 uS to suspend the erase operation and go into Erase Suspended mode. During  
this time, the system can monitor the Data Polling or Toggle Bit write operation status flags to  
determine when the device has entered erase suspend mode (see Write Operation Status section.)  
The system must use an address of an erasing sector to monitor Data Polling or Toggle Bit to  
determine if the Sector Erase operation has been suspended.  
In Erase Suspend mode, the system can read data from any sector that is not being erased. A read  
from a sector being erased will result in write operation status data. After the system writes the Erase  
Suspend command and waits until the Toggle Bit stops toggling, data reads from the device may then  
be performed (see Write Operation Status section). Any further writes of the Erase Suspend  
command at this time will be ignored.  
To resume operation of Sector Erase, the Erase Resume command (30H) should be written. Any  
further writes of the Erase Resume command at this point will be ignored. Another Erase Suspend  
command can be written after the chip has resumed Sector Erase operation.  
DQ7  
Data Polling  
The BM29F400 device features Data Polling as a method to indicate to the host the status of the  
Byte/Word Programming, Chip Erase, and Sector Erase operations. When the Byte/Word  
Programming operation is in progress, an attempt to read the device will produce the compliment of  
the data last written to DQ7. Upon completion of the Byte/Word Programming operation, an attempt  
to read the device will produce the true data last written to DQ7. When the Chip Erase or Sector  
Erase operation is in progress, an attempt to read the device will produce a logical "0" at the DQ7  
output. Upon completion of the Chip Erase or Sector Erase operation, an attempt to read the device  
will produce a logical "1" at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure  
3.  
For Chip Erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write  
pulse sequence. For Sector Erase, the Data Polling is valid after the last rising edge of the sector  
erase WE pulse. For both Chip Erase and Sector Erase, Data Polling must be performed at sector  
address within any of the sectors being erased and not a protected sector. Otherwise, the Data  
Polling status may not be valid. Once the Internal Algorithm operation is close to being completed,  
the BM29F400 data pins (DQ7) may change asynchronously while the output enable (OE ) is  
asserted low. This means that the device is driving status information on DQ7 at one instant and valid  
data at the next instant of time. Depending on when the system samples the DQ7 output, it may read  
status or valid data. Even if the device has completed the Internal Algorithm operation and DQ7 has a  
valid data, data outputs on DQ0-DQ6 may be still invalid. Valid data on DQ0-DQ7 will be read on the  
successive read attempts.  
The Data Polling feature is only active during the Byte/Word Programming operation, Chip Erase  
operation, Sector Erase Operation, or Sector Erase time-out window (see Table 7).  
A Winbond Company  
Publication Release Date: May 1999  
Revision A1  
- 13 -  
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