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29F400B-12TI 参数 Datasheet PDF下载

29F400B-12TI图片预览
型号: 29F400B-12TI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, 120ns, PDSO48, TSOP-48]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 38 页 / 227 K
品牌: WINBOND [ WINBOND ]
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BRIGHT  
Microelectronics  
Inc.  
Preliminary BM29F400T/BM29F400B  
Since this is an open-drain output, several RY/BY pins can be tied together with a pull-up resistor to  
Vcc.  
RESET Hardware Reset  
The BM29F400 device may be RESET by driving the RESET pin to VIL. The RESET pin must be  
kept low (VIL) for at least 500 nS. Pulling the RESET pin low will terminate any operation in progress.  
The internal state machine will be RESET to the read mode 1 mS to 230 mS after the RESET pin is  
driven low. If a hardware RESET occurs during a Programming or Erase operation, the data at that  
particular location will be indeterminate.  
When the RESET pin is low and the internal RESET is complete, the device goes to Standby mode  
and cannot be accessed. Also, note that all the data output pins are tri-stated for the duration of the  
RESET pulse. Once the RESET pin is taken high, the device requires 500 nS of wake up time until  
outputs are valid for a read access.  
The RESET pin may be tied to the system RESET input. Therefore, if a system RESET occurs  
during an Internal Programming or Erase operation, the device will be automatically RESET to read  
mode. This will enable the system's microprocessor to read the boot-up firmware from the Flag's  
memory.  
Data Protection  
The BM29F400 is designed to offer protection against accidental erasure or programming caused by  
spurious system level signals that may exist during power transitions. During power-up the device  
automatically resets the internal state machine in the Read mode. Also, with its control register  
architecture, alteration of the memory contents only occurs after successful completion of specific  
multi-bus cycle command sequences. The device also incorporates several features to prevent  
inadvertent write cycles resulting from Vcc power-up and power-down transitions or system noise.  
Low Vcc Write Inhibit  
To avoid initiation of a write cycle during Vcc power-up and power-down, a write cycle is locked out  
for Vcc less than 3.2V (typically 3.7V). If Vcc < VLKO, the command register is disabled and all  
internal programming/erase circuits are disabled. Under this condition the device will RESET to the  
Read mode. Subsequent writes will be ignored until the Vcc level is greater than VLKO. It is the users  
responsibility to ensure that the control pins are logically correct to prevent unintentional writes when  
Vcc is above 3.2V.  
Write Pulse "Glitch" Protection  
Noise pulses of less than 5 nS (typical) on OE , CE or WE will not initiate a write cycle.  
Logical Inhibit  
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle  
CE and WE must be a logical "0" while OE is a logical "1".  
Power-Up Write Inhibit  
Power-up of the device with WE = CE = VIL and OE = V will not accept commands on the rising  
IH  
edge of WE . The internal state machine is automatically RESET to the Read mode on power-up.  
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