WILLAS
SOD-123
SMALL–SIGNAL CHARACTERISTICS
in order to
•
Low profile surface mounted application
optimize
– Bandwidth
Current–Gain
board space.
Product
•
Low power loss, high efficiency.
(I
C
High current capability, low forward voltage drop.
(NPN)
•
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
High surge capability.
–20 Vdc, f = 100 MHz)
(PNP)
•
= –10 mAdc, V
CE
=
•
Guardring for overvoltage protection.
Output Capacitance
•
Ultra high-speed switching.
(V
CB
= 5.0 Vdc, I
E
planar
f
chip, metal silicon junction.
(NPN)
•
Silicon epitaxial
= 0, = 1.0 MHz)
(V
CB
= –5.0 Vdc,
meet
0, f = 1.0 MHz)
•
Lead-free parts
I
E
=
environmental standards of
(PNP)
(NPN)
h
ie
better reverse leakage current and thermal resistance.
Dual General Purpose Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
PACKAGE
FM120-M
MMBT3946DW1T1
THRU
FM1200-M
Unit
MHz
0.012(0.3) Typ.
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Package outline
Features
Characteristic
Symbol
Min
Max
•
Batch process design, excellent power dissipation offers
SOD-123H
Pb Free Produc
f
T
300
250
C
obo
–
–
C
ibo
–
–
0.031(0.8) Typ.
0.146(3.7)
0.130(3.3)
–
–
pF
4.0
4.5
pF
8.0
10.0
kΩ
10
12
0.040(1.0)
0.024(0.6)
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Input
RoHS product for packing code suffix "G"
Capacitance
•
(V
EB
= 0.5
free product
0, f
packing
MHz)
Halogen
Vdc, I
C
=
for
= 1.0
code suffix "H"
Mechanical
= 0, f
(V
EB
= –0.5 Vdc, I
C
data
= 1.0 MHz)
(PNP)
•
Epoxy : UL94-V0 rated flame retardant
I
nput Impedance
•
Case :
Vdc,
plastic,
mAdc, f =
(V
CE
= 10
Molded
I
C
= 1.0
SOD-123H
1.0 kHz)
(NPN)
,
•
= –10
:Plated terminals, solderable per MIL-STD-750
(V
Terminals
Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
(PNP)
CE
1.0
0.031(0.8) Typ.
2.0
14
21
µAdc,
R
S
=1.0 kΩ,
V
RMS
f=1.0kHz) (NPN)
Maximum DC Blocking Voltage
20
30
DC
(V
CE
=–5.0 Vdc,I
C
=–100
µAdc,
R
S
=1.0 kΩ,
V
f=1.0kHz) (PNP)
Maximum Average Forward Rectified Current
I
O
SWITCHING CHARACTERISTICS
(V
RMS Voltage
Maximum
CE
=5.0 Vdc,I
C
=100
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(NPN)
1.0
40
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
(PNP)
3.0
60
Marking Code
12
13
14
15
16
18
10
115
120
Noise
Recurrent Peak Reverse Voltage
Figure
NF
dB
20
30
40
50
60
80
100
150
200
Maximum
V
RRM
28
–
35
50
40
–
Ratings at 25℃ ambient
I
C
= –1.0 mAdc,
otherwise specified.
(PNP)
(V
CE
= –10 Vdc,
temperature unless
f = 1.0 kHz)
Single phase half wave, 60Hz, resistive of inductive load.
Output Admittance
For capacitive load, derate current by 20%
Voltage Feedback Ratio
h
re
X 10
–4
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(NPN)
0.5
8.0
•
Mounting Position : Any
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
(PNP)
0.1
10
•
Weight : Approximated 0.011 gram
Small–Signal Current Gain
h
FE
–
MAXIMUM RATINGS
= 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f
AND ELECTRICAL CHARACTERISTICS
100
(NPN)
400
100
400
h
oe
µ
mhos
Method 2026
5.0
4.0
–
–
–
42
60
1.0
35
30
40
35
120
56
80
70
100
105
150
140
200
Delay Time
(V
CC
= 3.0 Vdc,
sine-wave
I
FSM
Peak Forward Surge Current 8.3 ms single half
V
BE
= –0.5 Vdc)
superimposed on rated load (JEDEC method)
(V = –3.0 Vdc,
(NPN)
(PNP)
(NPN)
(NPN)
(PNP)
(NPN)
0.50
Typical Thermal Resistance (Note 2)
CC
V
BE
= 0.5 Vdc)
R
ΘJA
C
J
t
d
ns
Typical Junction Capacitance (Note 1)
Operating Temperature
(I
C
= –10
Range
Storage Temperature Range
Storage Time (V
Rise Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
mAdc, I
B1
= –1.0
T
J
mAdc)
CC
35
35
(PNP)
to +125
-55
t
r
t
s
t
f
–
–
–
–
0.70
–
-55 to +150
TSTG
= 3.0 Vdc, I
C
= 10 mAdc)
-
65
to
200
+175
Fall Time
(I
B1
= I
B2
DC
Maximum Forward Voltage at 1.0A
= 1.0
Rated DC Blocking Voltage
B1
B2
CC
CHARACTERISTICS
(V
= –3.0 Vdc, I
C
= –10 mAdc)
mAdc)
V
F
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
ns
225
50
0.85
0.9
0.92
Maximum Average Reverse
= I =
at @T
mAdc)
(I
Current
–1.0
A=25℃
(PNP)
0.5
75
10
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
