Dual General Purpose Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
dissipation offers
•
Batch process design, excellent power
MMBT3946DW1T1
better reverse leakage current and thermal resistance.
(PNP)
•
Low profile surface mounted application in order to
WILLAS
FM120-M
MMBT3946DW1T1
THRU
outline
SOD-123H
3V
0.146(3.7)
0.130(3.3)
FM1200-M
PACKAGE
Pb Free Produc
Features
TYPICAL ELECTRICAL CHARACTERISTICS
Package
3V
optimize board space.
< 1 ns
+9.1 V
•
Low power loss, high efficiency.
275
•
High current capability, low forward voltage drop.
< 1 ns
•
High surge capability.
10 k
+0.5 V
•
Guardring for overvoltage protection.
0
•
Ultra high-speed switching.
Cs < 4 pF*
Silicon epitaxial planar chip, metal silicon junction.
•
V
10.6
300 ns
•
Lead-free parts meet environmental standards of
10 < t1< 500 s
10.9 V
t1
DUTY CYCLE
MIL-STD-19500 /228
= 2%
DUTY CYCLE = 2%
•
RoHS product for packing code suffix "G"
Halogen free product for packing code
Total shunt capacitance of test jig and connectors
*
suffix "H"
275
0.012(0.3) Typ.
10 k
1N916
Cs
0.056(1.4)
< 4 pF*
0.071(1.8)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
Equivalent Test Circuit
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Figure 19. Delay and Rise T
ime
Figure 20. Storage and Fall T
ime
Equivalent Test Circuit
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
10
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
5000
Dimensions in inches and (millimeters)
CAPACITANCE (pF)
3.0
Marking Code
Cibo
RATINGS
1000
700
500
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Recurrent Peak Reverse Voltage
2.0
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
12
20
14
20
Q, CHARGE (pC)
Ratings at 25℃ ambient temperature unless otherwise specified.
5.0
Single phase half wave, 60Hz,
Cobo
resistive of inductive load.
For capacitive load, derate current by 20%
7.0
VCC= 40 V
(PNP)
3000
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
I /I = 10
2000
CB
(PNP)
13
300
30
200
100
30
70
50
1.0
21
14
40
Q
28
T
15
50
35
50
16
60
42
60
1.0
18
80
56
QA
80
10
100
70
100
200
115
150
105
150
120
200
140
200
40
Maximum Average Forward Rectified Current
I
O
1.0
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.07.0 10
20 30 40
Peak Forward Surge Current 8.3 ms single half
(VOLTS)
REVERSEBIAS
sine-wave
I
FSM
superimposed on rated load (JEDEC method)
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC , COLLECTOR CURRENT (mA)
30
Typical Thermal Resistance (Note 2)
Figure 21. Capacitance
R
ΘJA
C
J
TSTG
500
-55 to +125
300
200
Figure 22. Charge Data
40
120
100
Maximum Forward Voltage at 1.0A DC
V
F
70
t r@ V
Maximum Average Reverse Current at @T A=25℃
CC= 3.0 V
50
I
R
@T A=125℃
Rated DC Blocking Voltage
15 V
30
NOTES:
20
40 V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
10
2.0 V
2- Thermal Resistance From Junction to Ambient
7
t d@ VOB= 0V
5
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
t f , FALLTIME (ns)
Typical Junction Capacitance (Note 1)
500
Operating Temperature Range
(PNP)
300
Storage Temperature Range
200
-55 to +150
VCC= 40 V
IB1 = IB2
IC/IB = 10
T
J
(PNP)
-
65
to +175
IC/IB = 20
100
70
50
30
20
10
7
5
TIME (ns)
0.50
0.70
0.5
10
IC/IB= 10
0.85
0.9
0.92
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
Figure 23. Turn
-
On Time
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 24. Fall Time
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
