Dual General Purpose Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
WILLAS
FM120-M
MMBT3946DW1T1
THRU
FM1200-M
Pb Free Produ
Package outline
TYPICAL ELECTRICAL CHARACTERISTICS
dissipation offers
•
Batch process design, excellent power
MMBT3946DW1T1
Features
(NPN)
•
Low profile surface mounted application in order to
hFE , DC CURRENTGAIN (NORMALIZED)
2.0
better reverse leakage current and thermal resistance.
SOD-123H
optimize board space.
(NPN)
0.146(3.7)
0.130(3.3)
•
Low power loss, high efficiency.
T = +125 °C
J
•
High current capability, low forward voltage drop.
+25°C
1.0
•
High surge capability.
•
Guardring for overvoltage protection.
0.7
•
Ultra high-speed switching.
-55°C
0.5
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
0.3
MIL-STD-19500 /228
VCE= 1.0 V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
0.2
Halogen free product for packing code suffix "H"
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
0.1
0.2
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
0.1
plastic, SOD-123H
•
Case : Molded
0.3
0.031(0.8) Typ.
IC , COLLECTOR
,
CURRENT (mA)
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
1.0
•
Polarity : Indicated by cathode band
0.040(1.0)
0.024(0.6)
30
50
70
100
200
0.031(0.8) Typ.
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
Dimensions in inches and (millimeters)
•
Mounting Position : Any
0.8
•
Weight : Approximated 0.011 gram
I = 1.0 mA
10 mA
30 mA
(NPN)
100 mA
TJ = 25 °C
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
0.6
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.4
RATINGS
Marking Code
0.2
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0
0.01
0.02 0.03
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
12
20
14
13
30
21
14
40
15
50
16
60
42
2.0
60
3.0
18
80
56
80
5.0
1.0
30
40
120
10
100
70
7.0 10
100
115
150
105
150
120
200
140
200
28
35
0.05 0.07 0.1
30
0.5 0.7 1.0
50
40
V
DC
0.2
20
0.3
IB , BASE CURRENT (mA)
Maximum Average Forward Rectified Current
I
O
16. Collector Saturation Region
Figure
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
V ,VOLTAGE (VOLTS)
TSTG
COEFFICIENT(mV/ °C)
Typical Thermal Resistance (Note 2)
1.2
Typical Junction Capacitance (Note 1)
(NPN)
TJ = 25°C
Operating Temperature Range
1.0
Storage Temperature Range
R
ΘJA
C
J
T
J
VBE(sat)@IC/IB =10
1.0
-55 to +125
0.5
0
(NPN)
θ
VC
0.8
-55 to +150
+25°C TO+125°C
-
65
to +175
FOR V
CE(sat)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.6
Maximum Average Reverse Current at @T A=25℃
VBE@ VCE=1.0V
V
F
-55°C
FM1100-MH
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
TO +25°C
FM1150-MH
FM1200-M
Rated DC Blocking Voltage
0.4
NOTES:
@T A=125℃
I
R
-0.5
-1.0
-1.5
0.50
0.70
0.5
10
θ
VB
FOR V
BE(sat)
80
0.85
-55°C TO+25 °C
+25°C TO+125 °C
0.9
0.92
VCE(sat)@ IC/IB =10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.2
0
2- Thermal Resistance From Junction to Ambient
1.0
2.0
5.0
10
20
50
100
200
-2.0
0
20
40
60
100 120 140
160 180 200
IC, COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 17. "ON" Voltages
Figure 18. Temperature Coefficients
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
