WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
Dual General
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT
Purpose Transistor
PACKAGE
FM120-M
MMBT3904DW1T1
THRU
FM1200-M
Pb Free Produc
Features
TYPICAL TRANSIENT CHARACTERISTICS
Package outline
SOD-123H
10
7.0
CAPACITANCE (pF)
5.0
3.0
2.0
better reverse leakage current and thermal resistance.
T = 25°C
J
•
Low profile surface mounted application in order to
TJ = 125°C
optimize board space.
5000
•
Low power loss, high efficiency.
VCC = 40 V
•
High current capability, low forward voltage drop.
3000
IC/IB = 10
•
High surge capability.
2000
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
1000
•
Silicon epitaxial planar chip, metal silicon junction.
700
Cibo
•
Lead-free parts meet environmental standards of
500
MIL-STD-19500 /228
300
•
RoHS product for packing code suffix "G"
Cobo
200
Halogen free product for packing code suffix "H"
Q, CHARGE (pC)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
QT
QA
0.040(1.0)
0.024(0.6)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
1.0
•
Case : Molded plastic, SOD-123H
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
REVERSE BIAS VOLTAGE (VOLTS)
Method 2026
100
70
50
1.0
2.0 3.0
0.031(0.8) Typ.
5.0 7.0 10
20
30
50 70 100
0.031(0.8) Typ.
200
IC, COLLECTOR CURRENT (mA)
Dimensions in inches
Data
Figure 4. Charge
and (millimeters)
500
300
200
Figure 3. Capacitance
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
IC/IB = 10
500
300
200
CHARACTERISTICS
t r, RISE TIME (ns)
100
70
50
30
13
20
30
VCC = 40 V
IC/IB = 10
MAXIMUM RATINGS AND ELECTRICAL
TIME (ns)
Ratings at 25℃ ambient temperature unless otherwise specified.
100
Single phase half wave, 60Hz, resistive of inductive load.
tr @ VCC = 3.0 V
70
For capacitive load, derate current by 20%
50
30
20
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
10
Maximum DC Blocking Voltage
7
5
Maximum Average Forward Rectified Current
30
1.0
2.0 3.0 5.0 7.0 10
20
superimposed on rated load (JEDEC method)
Figure 5. Turn–On
100
50 70
I
O
IC,
8.3 ms single half sine-wave
Peak Forward Surge Current
COLLECTOR CURRENT (mA)
I
FSM
td @ VOB = 0 V
40 V
12
20
V
RRM
15 V
14
V
RMS
2.0
20
V
DC
V
200
14
40
28
40
15
50
35
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
21
10
30
7
5
1.0
2.0 3.0
Time
5.0 7.0 10
1.0
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
30
200
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
500
Operating Temperature Range
R
ΘJA
C
J
t′s
T
J
ts - 1/8 tf
=
IB1 = IB2
TSTG
500
-55 to +125
300
200
t f , FALL TIME (ns)
100
0.50
70
50
30
20
10
200
7
5
1.0
2.0 3.0
Figure 6. Rise Time
40
120
-55 to
V
+150
40 V
CC =
IB1 = IB2
300
Storage Temperature Range
= 10
I /I = 20
IC/IB
200 C B
t s, STORAGE TIME (ns)
′
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
@T A=125℃
-
65
to +175
Maximum Average Reverse Current at @T A=25℃
IC/IB = 20
50
100
70
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
IC/IB = 20
V
F
I
R
IC/IB = 10
0.70
0.5
0.85
10
0.9
0.92
30
20
NOTES:
10
7
5
IC/IB = 10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
