WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
optimize board space.
•
Low power loss, high efficiency.
Characteristic
•
High current capability, low forward voltage drop.
OFF CHARACTERISTICS
•
High surge capability.
Collector–Emitter Breakdown Voltage
protection.
•
Guardring for overvoltage
(2)
(IC = 1.0 mAdc, IB = 0)
switching.
•
Ultra high-speed
Dual General Purpose Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
FM120-M
MMBT3904DW1T1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Min
Max
0.130(3.3)
0.146(3.7)
0.012(0.3) Typ.
Unit
Vdc
40
60
6.0
–
–
–
–
–
50
50
•
Silicon epitaxial planar chip, metal silicon junction.
Collector–Base Breakdown Voltage
•
Lead-free
= 0)
(IC = 10
mAdc,
IE
parts meet environmental standards of
MIL-STD-19500 /228
Emitter–Base Breakdown Voltage
code suffix "G"
•
RoHS product for packing
(IE = 10
mAdc,
IC =
product for packing code suffix "H"
Halogen free
0)
0.071(1.8)
0.056(1.4)
Vdc
Vdc
nAdc
nAdc
Mechanical data
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
flame retardant
•
Epoxy : UL94-V0 rated
ON CHARACTERISTICS (2)
Method 2026
Collector Cutoff
Molded plastic, SOD-123H
•
Case :
Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
DC Current Gain
: Indicated by cathode band
•
Polarity
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
•
Mounting Position : Any
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc,
Approximated 0.011 gram
•
Weight :
VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0
RATINGS AND
MAXIMUM
Vdc)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
ELECTRICAL
hFE
Dimensions in inches and (millimeters)
–
40
–
70
–
100
300
60
–
30
–
CHARACTERISTICS
Collector–Emitter Saturation Voltage
VCE(sat)
Vdc
Ratings at 25℃ ambient temperature unless otherwise specified.
(IC = 10 mAdc,
wave, 60Hz, resistive of inductive load.
IB = 1.0 mAdc)
–
0.2
Single phase half
(IC = 50 mAdc, I = 5.0 mAdc)
–
0.3
For capacitive load,
B
derate current by 20%
Base–Emitter Saturation Voltage
VBE(sat)
Vdc
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
(IC = 10 mAdc, IB = 1.0 mAdc)
0.65
0.85
Marking
=
Code
12
13
14
15
16
–
18
0.95
10
115
120
(IC 50 mAdc, IB = 5.0 mAdc)
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
Maximum DC Blocking Voltage
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
14
20
21
30
28
40
Maximum Average Forward Rectified Current
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
35
50
fT
42
60
56
70
Output Capacitance
(VCB = 5.0 Vdc, IE =
8.3 ms single half
Peak Forward Surge Current
0, f = 1.0 MHz)
sine-wave
superimposed on rated load (JEDEC method)
Cobo
Cibo
300
1.0
–
30
40
–
120
80
–
4.0
100
105
MHz
150
140
200
pF
pF
Typical Junction Capacitance
300
µs;
2. Pulse Test: Pulse Width
≤
(Note 1)
Duty Cycle
≤2.0%.
C
J
Operating Temperature Range
T
J
Storage Temperature Range
TSTG
Typical Thermal
Vdc, IC = 0,
(Note 2)
MHz)
(VEB = 0.5
Resistance
f = 1.0
Input Capacitance
-55 to +125
8.0
-
65
to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
