WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
•
Low profile surface mounted application in order to
Characteristic
Dual General Purpose Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
FM120-M
MMBT3904DW1T1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
Symbol
hie
SOD-123H
Min
Max
ELECTRICAL
reverse leakage current
(TA =
thermal resistance.
noted) (Continued)
better
CHARACTERISTICS
and
25°C unless otherwise
optimize board space.
Input Impedance
loss, high efficiency.
•
Low power
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
•
High current capability, low forward voltage drop.
•
High surge capability.
Voltage
Guardring
Ratio
•
Feedback
for overvoltage protection.
(VCE
Ultra
Vdc, IC = 1.0
switching.
1.0 kHz)
•
= 10
high-speed
mAdc, f =
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Small–Signal Current Gain
(VCE
MIL-STD-19500 /228
f = 1.0 kHz)
= 10 Vdc, IC = 1.0 mAdc,
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
Output Admittance
Mechanical
mAdc,
(VCE = 10 Vdc, IC = 1.0
data
f = 1.0 kHz)
•
Epoxy : UL94-V0 rated flame retardant
Unit
k
Ω
0.012(0.3) Typ.
1.0
2.0
0.5
0.1
0.146(3.7)
0.130(3.3)
10
12
8.0
10
400
400
40
60
5.0
4.0
hre
X 10–4
0.071(1.8)
0.056(1.4)
hfe
100
100
1.0
3.0
–
–
–
hoe
mmhos
0.040(1.0)
0.024(0.6)
Noise
•
Case : Molded plastic, SOD-123H
Figure
,
(VCE = 5.0 Vdc, IC = 100
mAdc,
RS = 1.0 k
Ω,
f = 1.0 kHz)
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
NF
0.031(0.8) Typ.
dB
SWITCHING CHARACTERISTICS
Method 2026
•
Polarity : Indicated by cathode band
Delay Time
(VCC = 3.0
•
Mounting Position : Any
Vdc, VBE = –0.5 Vdc)
Rise Time
(IC = 10
0.011
B1 =
•
Weight : Approximated
mAdc, I
gram
1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Dimensions in inches and (millimeters)
td
tr
ts
tf
–
–
–
–
35
35
200
50
ns
Fall Time
(IB1 = IB2 = 1.0 mAdc)
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ns
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
DUTY
Code
Marking
CYCLE = 2%
300 ns
Maximum Recurrent Peak
+10.9 V
Voltage
Reverse
Maximum RMS Voltage
Maximum DC Blocking Voltage
RATINGS
+3 V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
+3 V
t1
10 < t1 < 500
ms
12
13
14
15
V
16
18
10
115
120
+10.9
DUTY CYCLE = 2%
40
20
30
50
60
80
100
275
150
200
V
275
RRM
V
RMS
V
DC
I
FSM
14
21
28
35
42
20
30
0
40
50
60
10 k
10 k
1.0
1N916
30
40
120
56
70
105
150
140
200
Maximum Average Forward Rectified Current
-0.5 V
80
100
< 1 ns
I
O
< 4 pF*
Cs
Cs < 4 pF*
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
-9.1 V′
< 1 ns
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Figure 1. Delay and Rise Time
Storage Temperature Range
Equivalent Test Circuit
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
* Total
C
J
shunt capacitance of test jig and connectors
-55 to +125
T
J
TSTG
R
ΘJA
-55 to +150
Figure 2. Storage
+175
Fall Time
and
-
65
to
Equivalent Test Circuit
0.70
0.5
10
0.85
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
