WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Dual General Purpose Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
FM120-M
MMBT3904DW1T1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
The
Low power loss, high efficiency.
is a spin–off of our popular
•
MMBT3904DW1T1
device
SOT–23/SOT–323
capability, low forward voltage
designed for general
•
High current
three–leaded device. It is
drop.
purpose amplifier applications and is housed in the SOT–363
•
High surge capability.
six–leaded surface mount package. By putting two discrete devices in
•
Guardring for overvoltage protection.
Ultra high-speed switching.
one
•
package, this device is ideal for low–power surface mount
•
Silicon epitaxial planar chip,
at a premium.
applications where board space is
metal silicon junction.
•
Lead-free parts meet environmental standards of
•
hFE, 100–300
MIL-STD-19500 /228
•
Low VCE(sat),
≤
0.4 V
code suffix "G"
RoHS product for packing
•
Halogen free product for
•
Simplifies Circuit Design
packing code suffix "H"
Mechanical data
•
Reduces Board Space
•
Epoxy : UL94-V0
Count
•
Reduces Component
rated flame retardant
•
Case :
in 8 mm, 7–inch/3,000 Unit
•
Available
Molded plastic, SOD-123H
Tape and Reel
,
•
Terminals :Plated terminals, solderable per
•
Device Marking:
M
MBT3904DW1T1 = MA
MIL-STD-750
optimize board space.
0.146(3.7)
0.130(3.3)
6
0.012(0.3) Typ.
5
4
0.071(1.8)
0.056(1.4)
1
2
SOT-363
(3)
(2)
(1)
0.040(1.0)
0.024(0.6)
3
0.031(0.8) Typ.
Q
1
Q
2
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Featrues
•
Mounting Position : Any
RoHS product for packing code suffix "G",
•
Weight : Approximated 0.011 gram
Halogen free product for packing code suffix "H".
Method 2026
•
Weight :0.005g
Dimensions in inches and (millimeters)
(4)
(5)
(6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Value
Symbol
Rating
For capacitive load, derate current by 20%
Collector–Emitter Voltage
V
CEO
40
Marking Code
Unit
Vdc
Vdc
13
Vdc
30
30
V
ORDERING INFORMATION
Device
14
40
28
40
Marking
18
80
56
80
1.0
30
40
120
Shipping
3000 Units/Reel
10
115
120
100
150
200
70
100
105
150
140
200
Collector–Base Voltage
RATINGS
V
CBO
V
EBO
I
C
ESD
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Emitter–Base Voltage
Maximum Recurrent Peak Reverse Voltage
Collector Current –
Maximum RMS Voltage
Continuous
Maximum DC Blocking Voltage
Electrostatic Discharge
Maximum Average Forward Rectified Current
V
RRM
12
6.0
20
60
MMBT3904DW1T1
15
16
50
60
35
50
42
60
MA
V
RMS
200
14
20
V
DC
HBM>16000,
I
O
MM>2000
I
FSM
mAdc
21
Peak Forward Surge Current 8.3 ms single half sine-wave
THERMAL CHARACTERISTICS
Characteristic
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Total Package Dissipation(1)
Symbol
P
D
R
qJA
T
J
, T
stg
Max
Unit
T
Junction
Typical
A = 25°C
Capacitance (Note 1)
Operating Temperature Range
Thermal Resistance Junction to
Storage Temperature Range
Ambient
R
ΘJA
150
C
J
T
J
TSTG
mW
-55 to +150
833
-55 to +125
°C/W
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
V
F
0.50
1. Device mounted on FR4 glass
at @T A=25℃
circuit board using the minimum
epoxy printed
Maximum Average Reverse Current
I
R
1.
recommended footprint.
@T A=125℃
Junction and Storage
Temperature
CHARACTERISTICS
Range
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
–55 to +150
°C
0.70
0.5
10
0.85
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
