WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
drop.
•
High current capability, low forward voltage
.122(3.10)
•
High surge capability.
.106(2.70)
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
General Purpose Transistors
Features
SOT-23
FM120-M
2SC1623xLT1
THRU
FM1200-M
Pb Free Product
Package outline
.006(0.15)MIN.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.080(2.04)
Method 2026
0.031(0.8) Typ.
.083(2.10)
.110(2.80)
0.040(1.0)
0.024(0.6)
.008(0.20)
.003(0.08)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
.070(1.78)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
.004(0.10)MAX.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
20
V
.020(0.50)
RRM
14
V
.012(0.30)
RMS
V
DC
I
O
20
12
13
30
21
30
.055(1.40)
.035(0.89)
14
40
28
40
RATINGS
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Dimensions in inches and (millimeters)
I
FSM
R
ΘJA
Amp
Amp
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0.037
C
J
0.95
T
J
-55 to +125
0.037
0.95
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.079
V
F
I
R
0.50
2.0
0.70
0.85
0.9
0.92
Volts
0.5
10
0.035
@T A=125℃
0.9
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
