WILLAS
General Purpose Transistors
Features
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
2SC1623xLT1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Package outline
SOD-123H
•
Low profile surface mounted application in order to
•
Low power loss, high efficiency.
DC Current Gain
•
High current capability, low forward voltage drop.
(I
C
=1.0mA, V
surge capability.
•
High
CE
=6V)
Collector-Emitter Saturation Voltage
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
(I
C
=100mA,I
B
=10mA)
•
Silicon epitaxial
Voltage
Base-Emitter Saturation
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
(I
C
=100mA,I
B
=10mA)
MIL-STD-19500 /228
Base -Emitter
product for packing code suffix "G"
•
RoHS
On Voltage
I
C
=1mA,V
CE
=6.0V)
product for packing code suffix "H"
Halogen free
optimize board space.
ON CHARACTERISTICS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
h
FE
V
CE(sat)
V
BE(sat)
V
BE
120
-
-
-
0.15
0.86
0.62
560
0.3
1.0
0.65
0.071(1.8)
0.056(1.4)
V
V
V
0.040(1.0)
0.024(0.6)
0.55
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
SMALL-SIGNAL CHARACTERISTICS
•
Case : Molded plastic, SOD-123H
Current-Gain-Bandwidth Product
,
•
Terminals :Plated
(V
CE
=6.0V,I
E
=1.0MHz)
terminals, solderable per MIL-STD-750
Method 2026
Output Capacitance(V
CE
= 6V, I
E
=0, f=1.0MHz)
F
t
C
ob
0.031(0.8) Typ.
-
250
3
-
-
0.031(0.8) Typ.
MHz
P
f
-
•
Polarity : Indicated by cathode band
hFE
Values are classified as followes
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
NOTE:
*
Q
R
S
120~270
180~390 270~560
h
FE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
DEVICE MARKING AND ORDERING INFORMATION
For capacitive load, derate current by 20%
Shipping
Device
Marking
Marking Code
2SC1623QLT1
RATINGS
L5
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
3000/Tape&Reel
L6
2SC1623RLT1
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
12
13
3000/Tape&Reel
20
30
14
40
28
40
15
50
35
50
16
60
18
80
56
10
100
70
115
150
105
150
120
200
140
V
2SC1623SLT1
L7
14
21
V
RMS
3000/Tape&Reel
20
30
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
42
60
1.0
30
V
80
100
200
V
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
