WILLAS
General Purpose Transistors
Fig.1 Grounded
design, excellent power dissipation offers
•
Batch process
emitter propagation characteristics
better reverse leakage current and thermal resistance.
50
•
Low profile surface mounted application in order to
FM120-M
2SC1623xLT1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Features
Package outline
Fig.2 Grounded emitter output characteristics( )
SOD-123H
100
0.50mA
optimize board space.
I
C
, COLLECTOR CURRENT (mA)
V
CE
= 6 V
T
A
= 25°C
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
T
A
= 100°C
20
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
10
•
High surge capability.
50
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
2
•
Silicon epitaxial planar chip, metal silicon junction.
1
•
Lead-free parts meet environmental standards of
I
C
, COLLECTOR CURRENT (mA)
80
25°C
60
0.071(1.8)
0.056(1.4)
– 55°C
40
MIL-STD-19500 /228
0.5
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.1
20
0.2
Mechanical data
0
0
0.4
CE
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
•
Case : Molded
, BASE TO
SOD-123H
V
BE
plastic,
EMITTER VOLTAGE(V)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity : Indicated by cathode band
10
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
8
6
0.8
1.2
1.6
0.040(1.0)
0.024(0.6)
2.0
0.031(0.8) Typ.
V
, COLLECTOR TO EMITTER VOLTAGE (V)
Method 2026
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Dimensions in inches and (millimeters)
500
I
C
, COLLECTOR CURRENT (mA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
4
RATINGS
Marking Code
2
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0
0
4
Maximum DC Blocking Voltage
8
12
h
FE
, DC CURRENT GAIN
200
50
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
16
V
DC
12
20
14
20
20
13
30
21
20
14
40
28
0.2
40
0.5
15
50
35
1
50
2
16
60
42
60
5
10
18
80
56
20
80
10
100
70
50
100
100
115
150
105
200
150
120
200
140
200
Vo
Vo
30
10
Vo
V
CE
,
Rectified Current
Maximum Average Forward
COLLECTOR TO EMITTER VOLTAGE (V)
I
O
I
C
, COLLECTOR CURRENT (mA)
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
T
J
TSTG
Typical Thermal Resistance (Note 2)
Operating Temperature Range
500
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Fig.6 Collector-emitter saturation voltage vs.
40
collector current
120
30
Am
℃/
P
-55 to +125
0.5
-
65
to +175
-55 to +150
℃
℃
h
FE
, DC CURRENT GAIN
200
0.2
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Maximum Forward Voltage at 1.0A DC
100
Maximum Average Reverse Current at @T A=25℃
V
F
@T A=125℃
0.50
0.1
0.05
0.70
0.5
10
0.85
0.9
0.92
Vo
Rated DC Blocking Voltage
50
I
R
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.02
20
2- Thermal Resistance From Junction to Ambient
0.01
0.2
0.5
1
2
5
10
20
50
100
200
10
0.2
0.5
1
2
5
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
