1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
We declare that the material of product compliance with RoHS requirements.
•
High current capability, low forward voltage drop.
Pb-Free
surge capability.
•
High
package is available
RoHS product
for overvoltage protection.
•
Guardring
for packing code suffix ”G”
•
Ultra high-speed switching.
Halogen free product for packing code suffix “H”
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MAXIMUM RATINGS
code suffix "G"
RoHS product for packing
•
Halogen
Rating
free product for packing code suffix "H"
Symbol
Value
Unit
SOD-123H
General Purpose Transistors
Features
WILLAS
FM120-M
2SC1623xLT1
THRU
FM1200-M
Pb Free Product
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
0.040(1.0)
Mechanical data
Collector-Emitter Voltage
V
CEO
50
V
V
V
mAdc
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
Collector-Base Voltage
V
CBO
60
•
Case : Molded plastic, SOD-123H
Emitter-Base Voltage
V
EBO
7
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector current-continuoun
Method 2026
I
C
150
3
0.024(0.6)
COLLECTOR
0.031(0.8) Typ.
1
BASE
THERMAL
:
CHARATEERISTICS
•
Polarity Indicated by cathode band
Characteristic
•
Mounting Position : Any
Total
Weight :
Dissipation FR-5 Board, (1)
•
Device
Approximated 0.011 gram
T
A
=25 C
o
Dimensions in inches and (millimeters)
2
Symbol
P
D
Max
Unit
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Derate
25℃ ambient temperature unless otherwise specified.
above 25
C
1.8
mW/
o
C
Ratings at
225
mW
Thermal
half wave, 60Hz, resistive of inductive
Single phase
Resistance, Junction to Ambient
load.
For
Total Device Dissipation
capacitive load, derate current by 20%
Marking Code
RATINGS
Alumina Substrate, (2) TA=25
o
C
o
R
θJA
556
o
C
/
W
P
D
12
20
13
30
21
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
300
Maximum Recurrent Peak Reverse Voltage
Derate above 25 C
V
RRM
V
RMS
V
DC
I
O
I
FSM
14
2.4
40
15
16
mW/
o
C
60
50
mW
Thermal Resistance, Junction to Ambient
Maximum RMS Voltage
Junction and Storage Temperature
Maximum DC Blocking Voltage
R
θJA
14
Tj
20
,Tstg
417
28
C
35
/
W
50
C
o
o
18
80
56
80
1.0
30
40
Typ
120
10
100
70
100
115
150
105
150
120
200
140
200
Vo
42
60
Vo
-55
30
to +150
40
Vo
DEVICE
Forward Rectified Current
Maximum Average
MARKING
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
2SC1623QLT1=L5
2SC1623RLT1 =L6
2SC1623SLT1=L7
o
Am
Typical Thermal Resistance (Note 2)
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
R
ΘJA
C
J
T
J
TSTG
Characteristic
Typical Junction Capacitance (Note 1)
Operating Temperature Range
OFF CHARACTERISTICS
Storage Temperature Range
Collector Cutoff Current (V
CB
=60V)
Symbol
-55 to +125
Min
Max
-55 to +150
℃
Unit
µA
µA
P
-
-
65
to +175
-
℃
Emitter Cutoff Current (V
BE
=5V)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
I
CBO
EBO
0.1
0.1
0.85
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
0.50
0.70
0.5
10
0.9
0.92
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
