WCSS0418V1F
Electrical Characteristics
Over the Operating Range (continued)
7C1325B
Parameter
I
OS
I
DD
I
SB1
Description
Output Short Circuit
Current
[7]
V
DD
Operating Supply Current
Automatic CE Power-Down
Current—TTL Inputs
Automatic CE Power-Down
Current—CMOS Inputs
Automatic CE Power-Down
Current—CMOS Inputs
Automatic CE Power-Down
Current—TTL Inputs
Test Conditions
V
DD
= Max., V
OUT
= GND
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX,
inputs switching
Max. V
DD
, Device Deselected,
V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V,
f = 0, inputs static
8.5-ns cycle, 117 MHz
10-ns cycle, 100 MHz
8.5-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
Min.
Max.
–300
350
325
125
110
10
Unit
mA
mA
mA
mA
mA
mA
I
SB2
I
SB3
8.5-ns cycle, 117 MHz
Max. V
DD
, Device Deselected,
V
IN
≥
V
DDQ
– 0.3V or V
IN
≤
0.3V, 10-ns cycle, 100 MHz
f = f
MAX
, inputs switching
Max. V
DD
, Device Deselected,
V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V,
f = 0, inputs static
All speeds
95
85
30
mA
mA
mA
I
SB4
Capacitance
[8]
Parameter
C
IN
C
I/O
Description
Input Capacitance
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
DD
= 5.0V
Max.
4
4
Unit
pF
pF
AC Test Loads and Waveforms
R1
OUTPUT
Z
0
=50Ω
R
L
=50Ω
5 pF
V
L
=1.5V
INCLUDING
JIGAND
SCOPE
R2
2.5V
OUTPUT
ALL INPUT PULSES
2.5V
10%
GND
Rise Time: 1 V/ns
90%
90%
10%
Fall Time: 1 V/ns
(a)
(b)
[9]
Notes:
7. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
8. Tested initially and after any design or process changes that may affect these parameters.
9. R1=1667Ω and R2=1538Ω for I
OH
/I
OL
=–4/8 mA, R1=521Ω and R2=481Ω for I
OH
/I
OL
=–2/2 mA.
Document #: 38-05245 Rev. **
Page 8 of 18
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
