WCSS0418V1F
Write Cycle Descriptions
[1, 2, 3, 4]
Function
Read
Read
Write Byte 0 - DQ
[7:0]
and DP
0
Write Byte 1 - DQ
[15:8]
and DP
1
Write All Bytes
Write All Bytes
GW
1
1
1
1
1
0
BWE
1
0
0
0
0
X
BWS
1
X
1
1
0
0
X
BWS
0
X
1
0
1
0
X
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND ............... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[5]
...............................................–0.5V to V
DD
+ 0.5V
DC Input Voltage
[5]
...........................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature
[6]
0°C to +70°C
–40°C +70°C
V
DD
3.135V to 3.6V
V
DDQ
2.375V to V
DD
Electrical Characteristics
Over the Operating Range
7C1325B
Parameter
V
OH
V
OL
V
IH
V
IH
V
IL
V
IL
I
X
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input HIGH Voltage
Input LOW Voltage
[5]
Input LOW Voltage
[5]
Input Load Current
(except ZZ and MODE)
Input Current of MODE
Input Current of ZZ
I
OZ
Output Leakage Current
Test Conditions
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –2.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 2.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
≤
V
I
≤
V
DDQ
Input = V
SS
Input = V
DDQ
Input = V
SS
Input = V
DDQ
GND
≤
V
I
≤
V
DD
, Output Disabled
–5
Notes:
4. When a write cycle is detected, all I/Os are three-stated, even during byte writes.
5. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
6. T
A
is the case temperature.
Min.
2.4
2.0
Max.
Unit
V
V
0.4
0.7
2.0
1.7
–0.3
–0.3
−1
–30
5
–5
30
5
V
DD
+
0.3V
V
DD
+
0.3V
0.8
0.7
1
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
Document #: 38-05245 Rev. **
Page 7 of 18
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
