WCSS0418V1F
Cycle Description Table
[1, 2, 3]
Cycle Description
Deselected Cycle, Power-down
Deselected Cycle, Power-down
Deselected Cycle, Power-down
Deselected Cycle, Power-down
Deselected Cycle, Power-down
SNOOZE MODE, Power-Down
READ Cycle, Begin Burst
READ Cycle, Begin Burst
WRITE Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
WRITE Cycle, Continue Burst
WRITE Cycle, Continue Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
None
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
CE
1
H
L
L
L
X
X
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
CE
3
X
X
H
X
X
X
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
CE
2
X
L
X
L
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
ZZ
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
ADSP
X
L
L
H
H
X
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
ADSC
L
X
X
L
L
X
X
X
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
ADV
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
WE
X
X
X
X
X
X
X
X
L
H
H
H
H
H
H
L
L
H
H
H
H
L
L
OE
X
X
X
X
X
X
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
CLK
L-H
L-H
L-H
L-H
L-H
X
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
DQ
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Q
High-Z
D
Q
High-Z
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
ZZ Mode Electrical Characteristics
Parameter
I
DDZZ
t
ZZS
t
ZZREC
Description
Snooze mode
standby current
Device operation to
ZZ
ZZ recovery time
Test Conditions
ZZ > V
DD
−
0.2V
ZZ > V
DD
−
0.2V
ZZ < 0.2V
2t
CYC
Min
Max
10
2t
CYC
Unit
mA
ns
ns
Notes:
1. X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
2. The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BWS
[1:0]
. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE
is a “Don't Care” for the remainder of the write cycle.
3. OE is asynchronous and is not sampled with the clock rise. During a read cycle DQ = High-Z when OE is inactive, and DQ=data when OE is active.
Document #: 38-05245 Rev. **
Page 6 of 18
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
