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WCMB2016R4X 参数 Datasheet PDF下载

WCMB2016R4X图片预览
型号: WCMB2016R4X
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16静态RAM [128K x 16 Static RAM]
分类和应用:
文件页数/大小: 11 页 / 214 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCMB2016R4X
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
GND
30 pF
INCLUDING
JIG AND
SCOPE
R2
Rise Time:
1 V/ns
Fall Time:
1 V/ns
V
CC
Typ
10%
ALL INPUT PULSES
90%
90%
10%
Equivalent to:
THÉVENIN EQUIVALENT
RTH
OUTPUT
V
Parameters
R1
R2
R
TH
V
TH
1.8V
13500
10800
6000
0.80
UNIT
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
t
CDR[5]
t
R[6]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
V
CC
= 1.0V
CE > V
CC
0.2V,
V
IN
> V
CC
0.2V or V
IN
< 0.2V
0
t
RC
Conditions
Min.
1.0
0.5
Typ.
Max.
1.95
5
Unit
V
µA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
V
CC(min.)
t
CDR
V
DR
> 1.0 V
V
CC(min.)
t
R
CE or
BHE.BLE
Notes:
6. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
>
100
µ
s or stable at V
CC(min)
>
100
µ
s.
7. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
4