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W3E32M72S-266BI 参数 Datasheet PDF下载

W3E32M72S-266BI图片预览
型号: W3E32M72S-266BI
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72 DDR SDRAM [32Mx72 DDR SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 19 页 / 669 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W3E32M72S-XBX  
White Electronic Designs  
26. Referenced to each output group: DQSL with DQ0-DQ7; and DQSH with DQ8-  
DQ15 of each chip.  
27. This limit is actually a nominal value and does not result in a fail value. CKE is  
HIGH during REFRESH command period (tRFC [MIN]) else CKE is LOW (i.e.,  
during standby).  
e) The full variation in the ratio of the maximum to minimum pull-up and pull-down  
current should be between .71 and 1.4, for device drain-to-source voltages from  
0.1V to 1.0 Volt, and at the same voltage and temperature.  
f) The full variation in the ratio of the nominal pull-up to pull-down current should  
be unity 10%, for device drain-to-source voltages from 0.1V to 1.0 Volt.  
38. Reduced Output Drive Curves:  
a) The full variation in driver pull-down current from minimum to maximum  
process, temperature and voltage will lie within the outer bounding lines of the  
V-I curve of Figure C.  
28. To maintain a valid level, the transitioning edge of the input must:  
a) Sustain a constant slew rate from the current AC level through to the target AC  
level, VIL(AC) or VIH(AC).  
b) Reach at least the target AC level.  
c) After the AC target level is reached, continue to maintain at least the target DC  
level, VIL(DC) or VIH(DC).  
29. The Input capacitance per pin group will not differ by more than this maximum  
amount for any given device.  
30. CK and CK# input slew rate must be 1V/ns (2V/ns differentially).  
31. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the  
DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be  
added to tDS and tDH for each 100mV/ns reduction in slew rate. If slew rate exceeds  
4V/ns, functionality is uncertain.  
b) The variation in driver pull-down current within nominal limits of voltage and  
temperature is expected, but not guaranteed, to lie within the inner bounding  
lines of the V-I curve of Figure C.  
c) The full variation in driver pull-up current from minimum to maximum process,  
temperature and voltage will lie within the outer bounding lines of the V-I curve  
of Figure D.  
d) The variation in driver pull-up current within nominal limits of voltage and  
temperature is expected, but not guaranteed, to lie within the inner bounding  
lines of the V-I curve of Figure D.  
e) The full variation in the ratio of the maximum to minimum pull-up and pull-down  
current should be between .71 and 1.4, for device drain-to-source voltages from  
0.1V to 1.0 V, and at the same voltage and temperature.  
32.  
V
CC must not vary more than 4% if CKE is not active while any bank is active.  
33. The clock is allowed up to 150ps of ꢀitter. Each timing parameter is allowed to  
vary by the same amount.  
34.  
t
HP min is the lesser of tCL minimum and tCH minimum actually applied to the device  
CK and CK# inputs, collectively during bank active.  
35. READs and WRITEs with auto precharge are not allowed to be issued until  
RAS(MIN) can be satisfied prior to the internal precharge command being issued.  
f) The full variation in the ratio of the nominal pull-up to pull-down current should  
be unity 10%, for device drain-to-source voltages from 0.1V to 1.0 V.  
39. The voltage levels used are derived from a minimum VCC level and the referenced  
test load. In practice, the voltage levels obtained from a properly terminated bus  
will provide significantly different voltage values.  
t
36. Any positive glitch must be less than 1/3 of the clock and not more than +400mV or  
2.9 volts, whichever is less. Any negative glitch must be less than  
1/3 of the clock cycle and not exceed either -300mV or 2.2 volts, whichever is more  
positive. The average cannot be below the 2.5V minimum.  
37. Normal Output Drive Curves:  
a) The full variation in driver pull-down current from minimum to maximum  
process, temperature and voltage will lie within the outer bounding lines of the  
V-I curve of Figure A.  
40.  
VIH overshoot: VIH(MAX) = VCCQ+1.5V for a pulse width 3ns and the pulse width  
can not be greater than 1/3 of the cycle rate. VIL undershoot: VIL (MIN) = -1.5V for a  
pulse width 3ns and the pulse width cannot be greater than 1/3 of the cycle rate.  
41.  
42.  
VCC and VCCQ must track each other.  
t
HZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will  
prevail over tDQSCK (MIN) + tRPRE (MAX) condition.  
tRPST end point and tRPRE begin point are not referenced to a specific voltage level  
43.  
b) The variation in driver pull-down current within nominal limits of voltage and  
temperature is expected, but not guaranteed, to lie within the inner bounding  
lines of the V-I curve of Figure A.  
c) The full variation in driver pull-up current from minimum to maximum process,  
temperature and voltage will lie within the outer bounding lines of the V-I curve  
of Figure B.  
but specify when the device output is no longer driving (tRPST), or begins driving  
(tRPRE).  
44. During initialization, VCCQ, VTT, and VREF must be equal to or less than VCC + 0.3V.  
Alternatively, VTT may be 1.35V maximum during power up, even if VCC/VCCQ are 0  
volts, provided a minimum of 42 ohms of series resistance is used between the VTT  
supply and the input pin.  
d) The variation in driver pull-up current within nominal limits of voltage and  
temperature is expected, but not guaranteed, to lie within the inner bounding  
lines of the V-I curve of Figure B.  
45. The current part operates below the slowest JEDEC operating frequency of 83 MHz.  
As such, future die may not reflect this option.  
46. When an input signal is HIGH or LOW, it is defined as a steady state logic HIGH or  
LOW.  
FIGURE C – REDUCED DRIVE PULL-DOWN  
CHARACTERISTICS  
FIGURE D – REDUCED DRIVE PULL-UP  
CHARACTERISTICS  
80  
0
Maximum  
70  
-10  
Minimum  
60  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
Nominal high  
50  
Nominal low  
40  
Nominal low  
30  
Minimum  
Nominal high  
Maximum  
20  
10  
0
0.0  
0.5  
1.0  
CCQ  
1.5  
- VOUT (V)  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V
VOUT (V)  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 2  
15  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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