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VG37648041AT 参数 Datasheet PDF下载

VG37648041AT图片预览
型号: VG37648041AT
PDF下载: 下载PDF文件 查看货源
内容描述: 256M : X4,X8 , X16 CMOS同步动态RAM [256M:x4, x8, x16 CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 86 页 / 964 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG37648041AT  
256M:x4, x8, x16  
VIS  
CMOS Synchronous Dynamic RAM  
4. The following states must not be interrupted by a command issued to the same bank, COMMAND  
INHIBIT or NOP commands, or allowable commands to the other bank should be issued on any clock  
edge occurring during these states. Allowable commands to the other bank are determined by its cur-  
rent state and Truth Table3, and according to Truth Table 4.  
Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once  
tRP is met, the bank will be in the idle state.  
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once  
tRCD is met, the bank will be in the row active” state.  
Read w/Auto-  
Precharge Enabled: Starts with registration of a READ command with AUTO PRECHARGE  
enabled and ends when tRP has been met. Once tRP is met, the bank will be  
in the idle state.  
Write w/Auto-  
Precharge Enabled: Starts with registration of a WRITE command with AUTO PRECHARGE  
enabled and ends when tRP has been met. Once tRP is met, the bank will be  
in the idle state.  
Write w/Auto  
Precharge Enabled: Starts with registrayion of a WRITE command with AUTO PRECHARGE  
enabled and ends when tRP has been met. Once tRP is met, the bank will be  
in the idle state.  
5.The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP  
commands must be applied on each positive clock edge during these states.  
t
Refreshing: Starts with registration of an AUTO REFERESH command and ends when RC is met.  
Once tRC is met, the DDR SDRAM will be in the all banks idle” state.  
Accessing Mode  
Register: Starts with registration of a LOAD MODE REGISTER command and ends when tMTC has  
been met. Once tMTC is met, the DDR SDRAM will be in the all banks idle” state.  
t
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when RP is  
met. Once tRP is met, all banks will be in the idle state.  
6. All states and sequences not shown are illegal or reserved.  
7. Not bank-specific; reguired that all banks are idle.  
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for pre-  
charging.  
9. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of bank.  
10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO  
PRECHARGE enabled and READs or WRITEs with AUTO PRECHARGE disabled.  
Document : 1G5-0157  
Rev.1  
Page64  
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