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VG3617161ET-8 参数 Datasheet PDF下载

VG3617161ET-8图片预览
型号: VG3617161ET-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1125 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VIS
Basic Features and Function description
1.Simplified State Diagram
VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
Self
Refresh
try
en
LF
SE
Mode
Register
Set
MRS
IDLE
LF
SE
it
ex
REF
AUTO
Refresh
CK
E
KE
C
ROW
ACTIVE
BS
T
ACT
Power
Down
CKE
CKE
T
BS
Active
Power
Down
ad
Re
W
r it
e
Au Write
to p
red with
har
ge
h
wit rge
ad cha
Re Pre
to
Au
Write
Read
PRE
WRITE
SUSPEND
CKE
CKE
WRITE
Read
READ
CKE
CKE
READ
SUSPEND
Write
AutoRead w
Pre ith
cha
rge
h
rec
E(P
PR
Write with
Auto Precharge
with
rge
ead
recha
R
P
o
Aut
m in
atio
n)
Read with
Auto Precharge
ter
WRITE A
SUSPEND
CKE
CKE
WRITE A
CKE
READ A
CKE
READ A
SUSPEND
POWER
ON
Precharge
Precharge
Automatic sequence
Manual input
Note: After the AUTO refresh operation, precharge operation is
performed automatically and enter the IDLE state
Document:1G5-0189
Rev.1
PR
E(P
rec
ha
rge
arg
erm
et
tion
in a
)
Page 8