欢迎访问ic37.com |
会员登录 免费注册
发布采购

VG3617161ET-8 参数 Datasheet PDF下载

VG3617161ET-8图片预览
型号: VG3617161ET-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1125 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
 浏览型号VG3617161ET-8的Datasheet PDF文件第8页浏览型号VG3617161ET-8的Datasheet PDF文件第9页浏览型号VG3617161ET-8的Datasheet PDF文件第10页浏览型号VG3617161ET-8的Datasheet PDF文件第11页浏览型号VG3617161ET-8的Datasheet PDF文件第13页浏览型号VG3617161ET-8的Datasheet PDF文件第14页浏览型号VG3617161ET-8的Datasheet PDF文件第15页浏览型号VG3617161ET-8的Datasheet PDF文件第16页  
VG3617161ET  
1,048,576 x 16 - Bit  
CMOS Synchronous Dynamic RAM  
VIS  
(3/3)  
Current state  
CS  
H
RAS  
X
CA  
X
WE Address  
Command  
DESL  
Action  
Notes  
Write  
recovering  
X
H
L
X
X
X
Nop ® Enter row active after tDPL  
L
L
H
H
H
H
NOP  
BST  
Nop ® Enter row active after tDPL  
Nop ® Enter row active after tDPL  
L
L
L
L
L
L
H
H
H
L
L
L
H
L
BA,CA,A10  
BA,CA,A10  
BA,RA  
BA,A10  
X
READ/READA  
WRIT/WRITA  
ACT  
Start read, Determine AP  
New write, Determine AP  
ILLEGAL  
8
H
H
L
H
L
3
3
L
PRE/PALL  
PEF/SELF  
MRS  
ILLEGAL  
L
H
L
ILLEGAL  
L
L
Op-Code  
X
ILLEGAL  
Write  
X
X
X
DESL  
Nop ® Enter precharge after tDPL  
recovering  
with auto  
precharge  
L
L
H
H
H
H
H
L
X
X
NOP  
BST  
Nop ® Enter precharge after tDPL  
Nop ® Enter precharge after tDPL  
L
L
L
L
L
L
H
H
H
L
L
L
H
L
BA,CA,A10  
BA,CA,A10  
BA,RA  
BA,A10  
X
READ/READA  
WRIT/WRITA  
ACT  
ILLEGAL  
3,8  
3
ILLEGAL  
H
H
L
H
L
ILLEGAL  
3
L
REF/PALL  
REF/SELF  
MRS  
ILLEGAL  
3
L
H
L
ILLEGAL  
L
L
Op-Code  
X
ILLEGAL  
Refreshing  
X
X
X
DESL  
Nop ® Enter idle after tRC  
L
H
H
X
X
NOP/BST  
Nop ® Enter idle after tRC  
L
L
H
L
L
H
L
X
X
X
X
X
X
X
X
READ/WRIT  
ILLEGAL  
ILLEGAL  
ACT/PRE/PALL  
L
L
REF/SELF/MRS ILLEGAL  
Mode register  
accessing  
H
X
X
DESL  
NOP  
Nop ® Enter idle after 2 Clocks  
L
H
H
H
X
Nop ® Enter idle after 2 Clocks  
ILLEGAL  
L
L
L
H
H
L
H
L
L
X
X
X
X
X
BST  
READ/WRITE  
ILLEGAL  
X
ACT/PRE/PALL/ ILLEGAL  
REF/SELF/MRS  
Note 1. All entries assume that CKE was active (High level)during the preceding clock cycle.  
2. If both banks are idle, and CKE is inactive(Low level), the device will enter Power down mode.  
All input buffers except CKE will be disabled.  
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA),  
depending on the state of that bank.  
4. If both banks are idle, and CKE is inactive(Low level), the device will enter Self refresh mode.  
All input buffers except CKE will be disabled.  
5. IIIegal if t  
is not satisfied.  
RCD  
6. IIIegal if t  
is not satisfied.  
RAS  
7. Must satisfy burst interrupt condition.  
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.  
9. Must mask preceding data if t  
is not satisfied.  
DPL  
10. IIIegal if t  
is not satisfied.  
RRD  
Document:1G5-0189  
Rev.1  
Page12