VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
VIS
Absolute Maximum Ratings(1)
Parameter
Symbol
Value
Unit
V
Voltage on any pin relative to Vss
VIN,VOUT
-1.0 to +4.6
Supply voltage relative to Vss
Short circuit output current
Power dissipation
VDD,VDDQ
IOUT
-1.0 to +4.6
50
V
mA
W
PD
1.0
Operating temperature
Storage temperature
TOPT
TSTG
0 to + 70
-55 to + 125
°C
°C
Recommended DC Operating Conditions (TA=0~70°C)
Parameter
Symbol
Min
Typ
Max
3.6
Unit
V
Note
Supply Voltage
VDD
VIH
VIL
3.0
2.0
3.3
–
Input High Voltage, all inputs
Input Low Voltage, all inputs
VDD+0.3
0.8
V
V
I
-0.3
–
II
Note I.Overshoot limit : VIH(MAX.)=VDDQ+2.0V with a pulse width < 3ns
II .Undershoot limit : VIL=VSSQ-2.0V with a pulse width< 3ns and -1.5V with a pulse width< 5ns
DC Electrical Characteristics
Parameter
Description
Min.
Max.
Unit
Note
IIL
Input Leakage Current
-5
5
mA
(0V £ V £ V
IN
All other pins not under test = 0V)
DD
IOL
Output Leakage Current
-5
5
mA
Output disable, (0V £ V
£ V
)
OUT
DDQ
VOH
VOL
LVTTL Output ”H” Level Voltage(lOUT = -2mA)
LVTTL Output ”L” Level Voltage(lOUT = 2mA)
2.4
-
-
V
V
0.4
Capacitance
(TA=25°C,f=1MHZ)
Parameter
Symbol
C11
Typ
2.5
Max
4
Unit
Input capacitance(CLK)
pF
pF
Input capacitance(all input pins except data
pins)
C12
2.5
4.0
5
Data input/output capacitance
CI/O
6.5
pF
Document:1G5-0189
Rev.1
Page4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
