VITESSE
SEMICONDUCTOR CORPORATION
2.488Gb/s SONET/SDH
STS-48/STM-16 Section Terminator
Advance Product Information
VSC8151
SONET/SDH data is demultiplexed, framed, descrambled, and the 27 bytes of the section and line overhead are
output. The BIP parity of the incoming signal is calculated and compared with the received B1 and B2 bytes for
calculating received parity errors. The byte aligned data, calculated B1/B2 parity, and frame boundary location
are then passed to the modification section where new overhead bytes are inserted. The modified data is
rescrambled, and B1/B2 parity recalculated (if desired) prior to serialization and output. An internal state
machine generates a section alarm inhibit signal (AIS) with user defined transport overhead that can be alterna-
tively transmitted in place of the received signal.
2.5G Serial and Parallel Input Interfaces
The demux receives differential clock and data signals at the appropriate SONET/SDH rate and demulti-
plexes the data for framing. These inputs are internally terminated by a center-tapped resistor network and
include biasing resistors to facilitate AC coupling. For differential input DC coupling, the network is terminated
to the appropriate termination voltage V
Term
providing a 50Ω to
V
Term
termination for both true and complement
inputs. For differential input AC coupling, the network is terminated to V
Term
via a blocking capacitor.
The common mode reference voltage is created by a resistor divider as shown. If the input signal is driven
differentially and DC-coupled to the part, the mid-point of the input signal swing should be centered about this
reference voltage and not exceed the maximum allowable amplitude. For single-ended, DC-coupling operations,
it is recommended that the user provides an external reference voltage which has better temperature and power
supply noise rejection than the on-chip resistor divider. The external reference should have a nominal value
equivalent to the common mode switch point of the DC coupled signal, and can be connected to either side of
the differential gate.
Figure 1: High Speed Serial Clock and Data Inputs
Chip Boundary
V
CC
=
3.3V
Z
O
C
IN
1.65V
50Ω
1.65V
C
AC
R
| |
=
1.5k
Ω
V
TERM
C
SE
Z
O
V
EE
= 0V
50Ω
C
IN
TYP = 100 pF (clock), 100nF (data)
C
SE
TYP = 100 pF (clock), 100nF (data) for single ended applications.
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VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52225-0, Rev. 2.9
12/1/99
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
