IRFZ44NS
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
(1)
Gate Threshold Voltage
Forward Transconductance
(1)
Drain-Source Leakage Current
Gate-Source Leakage
Dynamic
Total Gate Charge
(1)
Gate-Source Charge
(1)
Gate-Drain (“Miller”) Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall Time
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Continuous Source Current
Pulsed Source Current
(2)
Diode Forward Voltage
(1)
Source-Drain Reverse Recovery Time
(1)
Source-Drain Reverse Recovery Charge
(1)
Notes:
(1) Pulse width
≤
300µs; duty cycle
≤
2%
(2) Repetitive rating; pulse width
limited by max. junction temp.
V
DD
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 25A
V
GS
= 6V, I
D
= 23A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 25A
V
DS
= 55V, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
55
–
–
2.0
17
–
–
–
16
18
–
78
–
–
–
20
22
4.0
–
25
V
mΩ
V
S
µA
nA
±
100
40
65
—
—
34
240
119
210
–
–
–
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 44V, I
D
= 25A,V
GS
= 5V
V
DS
= 44V, V
GS
= 10V
I
D
= 25A
V
DD
= 28V
I
D
= 25A, R
G
= 12Ω
R
D
= 1.1Ω, V
GEN
= 10V
V
GS
= 0V
V
DS
= 25V
f = 1.0MH
Z
–
–
–
–
–
–
–
–
–
–
–
29
60
11
13
19
185
85
165
3223
308
135
nC
ns
pF
I
S
I
SM
V
SD
t
rr
Q
rr
–
–
I
S
= 25A, V
GS
= 0V
I
F
= 25A, di/dt = 100A/µs
–
–
–
–
–
–
–
0.93
TBD
TBD
49
160
1.3
TBD
TBD
A
V
ns
nC
t
on
t
off
t
r
90%
Switching
Test Circuit
V
GEN
R
G
V
IN
D
R
D
V
OUT
Switching
Waveforms
t
d(on)
t
d(off)
t
f
90 %
10%
INVERTED
90%
Output, V
OUT
DUT
10%
G
50%
50%
S
Input, V
IN
10%
PULSE WIDTH
VISHAY [ VISHAY TELEFUNKEN ]
