IRFZ44NS
N-Channel Enhancement-Mode MOSFET
CH
EN ET
T
R N
F
E
V
DS
55V
R
DS(ON)
20mΩ
I
D
49A
TM
G
uct
rod
wP
Ne
0.045 (1.14)
0.055 (1.40)
D
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
G
0.160 (4.06)
0.190 (4.83)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
G
PIN
D
S
0.575 (14.60)
0.625 (15.88)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.33
(8.38)
0.63
(17.02)
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.120 (3.05)
0.155 (3.94)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.12
(3.05)
Mounting Pad
Layout
0.08
(2.032)
Mechanical Data
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
1.3g
Packaging codes-options:
31A/31B- 800 per reel, 4.8K per box
Features
0.24
(6.096)
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
=10V
Pulsed Drain Current
(1)
A
= 25°C unless otherwise noted)
Symbol
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
T
C
= 25°C
P
D
E
AS
I
AR
E
AR
T
J
, T
stg
R
θJC
R
θJA
Limit
55
Unit
V
V
±
20
49
35
160
94
210
25
11
–55 to 175
1.6
40
A
W
mJ
A
mJ
°C
°C/W
Maximum Power Dissipation
Single Pulse Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(3)
Notes:
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) V
DD
= 25V, starting T
J
= 25°C, L = 470µH, R
G
= 25Ω, I
AS
= 25A
(3) Mounted on a 1 sq. inch, 2 oz. Cu pad on PCB.
1/23/01
VISHAY [ VISHAY TELEFUNKEN ]
