IRF840, SiHF840
Vishay Siliconix
2500
2000
1500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
150 °C
Coss = Cds + Cgd
101
Ciss
25 °C
1000
500
Coss
Crss
VGS = 0 V
1.4
1.2
100
0
0.4
0.6
0.8
1.0
100
101
VSD, Source-to-Drain Voltage (V)
91070_07
VDS, Drain-to-Source Voltage (V)
91070_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
102
Operation in this area limited
ID = 8.0 A
5
by RDS(on)
V
DS = 400 V
16
12
10 µs
2
V
DS = 250 V
10
V
DS = 100 V
100 µs
5
2
1 ms
8
4
0
1
10 ms
5
TC = 25 °C
TJ = 150 °C
Single Pulse
2
For test circuit
see figure 13
0.1
2
5
2
5
2
5
2
5
2
5
103
0.1
10
104
102
1
0
30
75
15
45
60
VDS, Drain-to-Source Voltage (V)
91070_08
QG, Total Gate Charge (nC)
91070_06
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91070
S-81290-Rev. B, 16-Jun-08
VISHAY [ VISHAY ]
