IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
-
V
V/°C
V
-
0.78
2.0
-
-
-
-
-
-
4.0
VGS
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
=
20 V
-
100
25
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
250
0.85
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
4.9
S
VGS = 0 V,
VDS = 25 V,
Input Capacitance
Ciss
Coss
Crss
-
-
-
1300
310
-
-
-
Output Capacitance
pF
Reverse Transfer Capacitance
120
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
-
-
-
-
63
ID = 8 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Source Charge
Qgs
VGS = 10 V
9.3
nC
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
32
-
14
23
49
20
-
VDD = 250 V, ID = 8 A
G = 9.1 Ω, RD = 31 Ω, see fig. 10b
ns
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
8.0
32
A
G
Pulsed Diode Forward Currenta
ISM
-
-
S
TJ = 25 °C, IS = 8 A, VGS = 0 Vb
2.0
970
8.9
V
Body Diode Voltage
VSD
trr
-
-
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
460
4.2
ns
µC
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91070
S-81290-Rev. B, 16-Jun-08
VISHAY [ VISHAY ]
