IRF840, SiHF840
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
Top
15 V
10 V
150 °C
101
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
25 °C
Bottom 4.5 V
100
4.5 V
100
20 µs Pulse Width
VDS = 50 V
20 µs Pulse Width
TC = 25 °C
100
101
4
5
6
7
8
9
10
91070_03
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
91070_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
ID = 8.0 A
VGS = 10 V
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
4.5 V
Bottom 4.5 V
100
20 µs Pulse Width
TC = 150 °C
100
101
- 60 - 40 - 20
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
0
20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
91070_02
91070_04
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91070
S-81290-Rev. B, 16-Jun-08
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