HFA135NH40PbF
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode,
275 A
V
R
= 200
V
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
L = 100
µH
High-speed
switch
R
g
= 25
Ω
Current
monitor
Freewheel
diode
I
L(PK)
D.U.T.
+
V
d
= 50
V
V
(AVAL)
V
R(RATED)
Decay
time
Fig. 12 - Avalanche Test Circuit and Waveforms
Document Number: 94050
Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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