HFA135NH40PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 275 A
FEATURES
Lug terminal
anode
• Very low Q
rr
and t
rr
• Lead (Pb)-free
• Designed and qualified for industrial level
RoHS
COMPLIANT
BENEFITS
HALF-PAK (D-67)
Base
cathode
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRODUCT SUMMARY
I
F
(maximum)
V
R
I
F(DC)
at T
C
275 A
400 V
138 A at 100 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
E
AS
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
L = 100 µH, duty cycle limited by maximum T
J
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
400
275
138
900
1.4
463
185
- 55 to + 150
mJ
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 µA
I
F
= 135 A
Maximum forward voltage
V
FM
I
F
= 270 A
I
F
= 135 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
T
J
= 125 °C, V
R
= 400 V
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
MIN.
400
-
-
-
-
-
-
TYP.
-
1.06
1.2
0.96
-
280
6.0
MAX.
-
1.65
2.0
1.58
3
380
-
mA
pF
nH
V
UNITS
From top of terminal hole to mounting plane
Document Number: 94050
Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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