HFA135NH40PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 275 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 135 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
77
280
7.5
15
150
2800
350
300
MAX.
120
440
14
30
780
6300
-
-
UNITS
ns
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery current
See fig. 8
SYMBOL
t
rr
I
RRM
A
Q
rr
dI
(rec)M
/dt
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
minimum
maximum
HALF-PAK module
SYMBOL
T
J
,
T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, flat, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
0.27
°C/W
0.05
30
1.06
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
N·m
(lbf · in)
g
oz.
UNITS
°C
Mounting torque
Terminal torque
Case style
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94050
Revision: 01-Aug-08
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