HFA135NH40PbF
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode,
275 A
I
F
- Istantaneous Forward Current (A)
1000
160
140
Maximum Allowable
Case Temperature (°C)
120
100
80
60
40
20
DC
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.7
1.2
1.7
2.2
2.7
3.2
0
0
50
100
150
200
250
300
350
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
10
T
J
= 150 °C
I
F(AV)
- DC Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs. DC
Forward Current
450
400
350
T
J
= 125 °C
T
J
= 25 °C
I
F
= 200 A
I
F
= 135 A
I
F
= 50 A
I
R
- Reverse Current (µA)
1
T
J
= 125 °C
300
t
rr
(ns)
T
J
= 25 °C
0.1
250
200
150
0.01
0.001
100
50
0.0001
100
200
300
400
0
100
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
10 000
70
60
50
T
J
= 125 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
I
RRM
(A)
1000
T
J
= 25 °C
40
30
20
10
I
F
= 200 A
I
F
= 135 A
I
F
= 50 A
100
1
10
100
1000
0
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Document Number: 94050
Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
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