DG534A/538A
Vishay Siliconix
TEST CIRCUITS
+15 V
+
Logic Input
t <20 ns
10 ꢂF
100 nF
r
t <20 ns
f
+5 V
+1 V
A , A , A
3 V
0 V
0
1
2
V+
50%
EN
S
S
A1
V
OUT
V
L
90%
B1
Bn
S
– S
A2
RS
S
1
S
16
A , A , A
0
1
2
Turning Off
Turning On
D
A
BBM Interval
8/4
or
4/2
V
O
D
B
Transition Time
WR
I/O
GND
V–
(t
)
Logic
Input
TRANS
1 kꢀ
45 pF
+
10 ꢂF
100 nF
–3 V
FIGURE 4. Transition Time and Break-Before-Make Interval
+15 V
+
+5 V
10 ꢂF
100 nF
V+
V
L
EN
A , A , A , RS
0
1
2
S
Bn
D
B
V
O
ꢁV
OUT
EN
C
L
= 1000 pF
V
OUT
D
A
8/4
or
ꢁ
V
is the measured voltage error due to
OUT
4/2
WR I/O
GND
V–
charge injection. The charge injection in Cou-
lombs is Q = C x ꢁV
L
OUT
+
10 ꢂF
100 nF
–3 V
FIGURE 5. Charge Injection
Document Number: 70069
S-05734—Rev. G, 29-Jan-02
www.vishay.com
11
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