V23990-P623-L82-PM
INPUT BOOST ( T1 , T2 / D1 , D4 )
Figure 5
BOOST IGBT
Figure 6
BOOST IGBT
Typical switching energy losses
as a function of collector current
E = f(ID)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
1,2
1,2
Eon High T
Eon High T
1
1
Eon Low T
0,8
0,6
0,4
0,2
0
0,8
0,6
0,4
0,2
0
Eon Low T
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
0
8
16
24
32
40
R G ( Ω )
0
10
20
30
40
50
60
I C (A)
With an inductive load at
With an inductive load at
Tj =
VDS
VGS
Tj =
VDS
VGS
25/126
°C
V
25/126
400
15
°C
V
=
=
=
=
400
15
8
V
V
Rgon
Rgoff
=
=
ID =
Ω
Ω
30
A
8
Figure 7
BOOST FWD
Figure 8
BOOST FWD
Typical reverse recovery energy loss
as a function of collector (drain) current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,4
0,3
0,2
0,1
0
0,5
0,4
0,3
0,2
0,1
0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
10
20
30
40
50
60
0
8
16
24
32
40
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VDS
VGS
Tj =
VDS
VGS
25/126
°C
25/126
400
15
°C
V
=
=
=
=
400
15
8
V
V
Ω
Ω
V
Rgon
Rgoff
=
=
ID =
30
A
8
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7
Revision: 2.1
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