V23990-P623-L82-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Boost Inverse Diode ( D9 , D10 )
Tj=25°C
Tj=125°C
1,00
1,67
1,54
2,00
VF
Diode forward voltage
20
V
Phase-Change
Material
RthJH
Thermal resistance chip to heatsink per chip
2,28
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
∆R/R
P
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
21511
Ω
%
R100=1486 Ω
-4,5
+4,5
210
3,5
mW
mW/K
K
B(25/50)
3884
3964
B-value
B(25/100)
K
Vincotech NTC Reference
F
Copyright by Vincotech
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Revision: 2.1
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