V23990-P623-L82-PM
INPUT BOOST ( T1 , T2 / D1 , D4 )
Figure 13
BOOST FWD
Figure 14
BOOST FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2,5
1,8
Qrr High T
1,5
1,2
0,9
0,6
0,3
2
Qrr High T
1,5
1
Qrr Low T
Qrr Low T
0,5
0
0
0
8
16
24
32
40
0
10
20
30
40
50
60
I C (A)
R Gon ( Ω)
At
At
At
Tj =
VCE
VGE
25/126
400
15
°C
Tj =
VR =
IF =
25/126
400
30
°C
V
=
=
V
V
Ω
A
Rgon
=
8
VGS =
15
V
Figure 15
BOOST FWD
Figure 16
BOOST FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
75
60
45
30
15
0
80
IRRM High T
60
40
20
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
10
20
30
40
50
60
8
16
24
32
40
I C (A)
R Gon (Ω)
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/126
400
15
°C
25/126
400
30
°C
V
=
=
V
V
Ω
A
Rgon
=
VGS =
8
15
V
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9
Revision: 2.1
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