V23990-P623-L82-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Bypass Diode ( D7 , D8 )
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,21
1,19
0,92
0,80
0,012
0,015
1,9
VF
Vto
rt
25
25
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Ω
0,05
Ir
1500
mA
Phase-Change
Material
RthJH
Thermal resistance chip to heatsink per chip
1,67
K/W
Boost IGBT ( T1 , T2 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3,3
1
4
4,7
2,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VGE=VCE
0,0005
50
V
V
1,82
2,00
15
0
0,04
200
650
0
mA
nA
Ω
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
23
22
5
Rise time
7
ns
142
168
3
td(off)
tf
Turn-off delay time
Rgoff=8 Ω
Rgon=8 Ω
15
400
30
Fall time
7
0,370
0,598
0,147
0,285
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
3000
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
11
15
520
50
120
nC
Phase-Change
Material
RthJH
Thermal resistance chip to heatsink per chip
1,13
K/W
Boost FWD ( D1, D4 )
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,27
1,90
2,8
15
VF
Irm
50
30
V
µA
Reverse leakage current
Peak recovery current
650
400
40
56
19
IRRM
trr
A
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
ns
56
0,477
1,458
0,053
0,281
8359
3588
Qrr
Erec
Rgon=8 Ω
15
µC
mWs
A/µs
di(rec)max
/dt
Phase-Change
Material
RthJH
Thermal resistance chip to heatsink per chip
1,08
K/W
Copyright by Vincotech
3
Revision: 2.1
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