10-FZ06NBA050SA-P915L33
datasheet
Boost Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
7000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
150 °C
300
±15
50
V
V
A
150 °C
figure 25.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
8
°C
Rgon
Rgoff
=
=
Ω
Ω
8
Copyright Vincotech
15
31 Jul. 2022 / Revision 3
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