10-FZ06NBA050SA-P915L33
datasheet
Boost Switching Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
Ω
150 °C
300
±15
50
V
150 °C
V
A
Rgon
Rgoff
8
figure 13.
FWD
figure 14.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
150 °C
300
±15
50
V
V
A
150 °C
Copyright Vincotech
12
31 Jul. 2022 / Revision 3
VINCOTECH [ VINCOTECH ]
