10-FZ06NBA050SA-P915L33
datasheet
Boost Switching Characteristics
figure 19.
FWD
figure 20.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
150 °C
300
±15
50
V
150 °C
V
A
figure 21.
FWD
figure 22.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
8
V
V
Ω
150 °C
300
±15
50
V
V
A
150 °C
Copyright Vincotech
14
31 Jul. 2022 / Revision 3
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