4N60
Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
Note:
1. VGS=10V
2. ID=4A
0.9
0.8
Note:
1. VGS=0V
2. ID=250µA
0.5
0.0
200
0
-50
200
-100
-50
50
100
150
-100
0
50
100
150
Junction Temperature, TJ (°С)
Junction Temperature, TJ (°С)
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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