4N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
13 35
ns
VDD = 300V, ID = 4.0A, RG = 25Ω
(Note 1, 2)
45 100 ns
Turn-Off Delay Time
Turn-Off Fall Time
25 60
35 80
ns
ns
Total Gate Charge
QG
15 20 nC
VDS= 480V,ID= 4.0A, VGS= 10 V
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
3.4
7.1
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 4.4 A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
tRR
V
GS = 0 V, IS = 4.4 A,
250
1.5
ns
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 8
QW-R502-061,N
www.unisonic.com.tw
UTC [ Unisonic Technologies ]
