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4N60L-X-TF3-T 参数 Datasheet PDF下载

4N60L-X-TF3-T图片预览
型号: 4N60L-X-TF3-T
PDF下载: 下载PDF文件 查看货源
内容描述: 4安培, 600/650伏特N沟道功率MOSFET [4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 392 K
品牌: UTC [ Unisonic Technologies ]
 浏览型号4N60L-X-TF3-T的Datasheet PDF文件第1页浏览型号4N60L-X-TF3-T的Datasheet PDF文件第2页浏览型号4N60L-X-TF3-T的Datasheet PDF文件第3页浏览型号4N60L-X-TF3-T的Datasheet PDF文件第5页浏览型号4N60L-X-TF3-T的Datasheet PDF文件第6页浏览型号4N60L-X-TF3-T的Datasheet PDF文件第7页浏览型号4N60L-X-TF3-T的Datasheet PDF文件第8页  
4N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
QW-R502-061,N  
www.unisonic.com.tw  
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