4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
4N60-A
600
650
Drain-Source Voltage
VDSS
4N60-B
V
Gate-Source Voltage
VGSS
IAR
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
4N60
260
mJ
mJ
mJ
V/ns
W
Single Pulsed (Note 3)
EAS
Avalanche Energy
4N60-E
200
Repetitive (Note 2)
EAR
10.6
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-251
36
W
Power Dissipation
PD
50
W
TO-252
50
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-251
SYMBOL
RATINGS
62.5
62.5
83
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
θJA
TO-252
83
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-251
1.18
3.47
2.5
θJc
TO-252
2.5
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
4N60-A
4N60-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 600 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
10
μA
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△T
J ID = 250 μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 2.2 A
Ω
CISS
COSS
CRSS
520 670 pF
VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance
70
8
90
11
pF
pF
Reverse Transfer Capacitance
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-061,N
www.unisonic.com.tw
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